| http://www.w3.org/ns/prov#value | - Field of the Invention [0002] This invention relates generally to processing methods for fabricating non-volatile semiconductor memory devices having a floating gate, such as EPROMs and Flash EEPROMS. More particularly, it relates to an improved method for eliminating problems associated with self-aligned source (SAS) photoresist process used in the fabrication of Flash EEPROMS. [0003] 2.
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