| http://www.w3.org/ns/prov#value | - ve layer of a transistor, wherein the silicon-containing semiconductor film is formed with a low pressure chemical vapor deposition method using a higher silane as a source gas, the higher silane being Sin H2n+2, where n is an integer greater than or equal to 2, wherein the higher silane has a flow rate per unit area R, with R???1.13???10-3 sccm/cm2 when R=Q/A, wherein A (cm2): a total surface are
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