| http://www.w3.org/ns/prov#value | - More specifically, although the above embodiments are all drawn to DRAM cell arrays, the invention may also be applied to a variety of types of ultralarge scale integrated circuit (ULSI) devices other than the DRAMs, including but not limited to semiconductor memories and logic ICs in light of the fact that the highly integrated vertical transistor structure and its fabrication methodology incorpo
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