| http://www.w3.org/ns/prov#value | - on Technology, Inc.Memory and other integrated circuitry having a conductive interconnect line pitch of less than 0.6 micronUS5768146 *28 Mar 199516 Jun 1998Intel CorporationMethod of cell contouring to increase device densityUS5796130 *26 Dec 199518 Aug 1998Lsi Logic CorporationNon-rectangular MOS device configurations for gate array type integrated circuitsUS5798541 *17 Mar 199725 Aug 1998Intel
|
