| http://www.w3.org/ns/prov#value | - For example, Japanese Patent Application Laid-open Nos. Hei 7-130652 and Hei 8-78329 show that a crystalline silicon film can be obtained by introducing a metal element such as nickel into an amorphous silicon film and heating the film at 550??? C. for four hours. [0008] However, a TFT manufactured by using the thus formed crystalline silicon film is still inferior in characteristics to a MOS tran
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