| http://www.w3.org/ns/prov#value | - Following forming of the grooves 36K, and as shown in FIG. 6B, a front side mask 57FS is formed on the circuit side 58K of the substrate 12K, and a back side mask 57BS is formed on the back side 56K of the substrate 12K. The front side mask 57FS and the back side mask 57BS can comprise hard masks formed of a material such as Si3N4 (silicon nitride) deposited using a suitable process such as CVD, a
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