| http://www.w3.org/ns/prov#value | - For the purpose of preventing crystallization, amorphous Se to which As is doped in the range of 1% to 20%, amorphous Se to which S, Te, P, Sb, Ge are doped in the range of 1% to 10%, amorphous Se to which the above elements and other elements are doped in combination, or As2S3, As2Se3, and the like, which have a higher crystallization temperature are preferably used for the electrode interface la
|
