| http://www.w3.org/ns/prov#value | - of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitrideUS767870813 Ene 200916 Mar 2010Micron Technology, Inc.forming a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate, using a vapor deposition process and ozone with one or more metal organo-amine precursor compoundsUS200200861113 Ene 200
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