| http://www.w3.org/ns/prov#value | - Moreover, a light-emitting device where a non-doped InGaN is employed as an active layer is advantageous in lowering Vf value as compared with a light-emitting device doped with an impurity. [0164] The active layer in the multi-quantum well structure of the present invention is formed of a combination for example of InGaN/GaN or InGaN/InGaN (differs in composition), thus forming a thin film-lamina
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