| http://www.w3.org/ns/prov#value | - However, for producing Si based semiconductor such as Si, SiGe, and the like, it is found that reproducibility of crystal growth is damaged because Si begins to accumulate on the heater 6 and the substrate holder 5 when the pressure for Si crystal growth in the vacuum chamber 1 reaches about 10-5 Torr and Si accumulates radically at the vacuum of around 10-4 Torr, which is suitable pressure for cr
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