| http://www.w3.org/ns/prov#value | - For the embodiment where a thin layer of material is transferred to a support substrate, the structure comprises the substantially single crystal but highly defective layer described, wherein the layer can comprise GaN, other III-nitride, silicon, gallium arsenide, indium phosphide, silicon carbide or other material, attached to a support substrate comprising a polycrystalline AlN, silicon, refrac
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