| http://www.w3.org/ns/prov#value | - odiment of the present invention, and FIG. 6b is a schematic, block diagram illustrating the configuration of that device. [0056]FIG. 7a, FIG. 7b, and FIG. 7c are schematic, longitudinal sectional views illustrating the primary elements of a substrate in the steps of a process for the manufacture of a polycrystalline silicon thin film transistor in that embodiment. [0057]FIG. 8a is a perspective v
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