| http://www.w3.org/ns/prov#value | - Moreover, in the above oxide semiconductor, in some cases, a transition metal element such as Fe or Ni or an oxide of the transition metal is contained as an impurity element in addition to a metal element contained as M. In this specification, for example, an oxide semiconductor including In, Ga, and Zn is referred to as an In???Ga???Zn???O-based oxide semiconductor, and a thin film thereof is re
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