| http://www.w3.org/ns/prov#value | - Polishing agents used in the CMP (Chemical Mechanical Polishing) process generally comprises spherical particles for polishing formed with a metal oxide such as silica or alumina with the average particle diameter of around 200 nm, an oxidant for the purpose to improve the polishing rate for metals for metals for wiring or circuits, and an additive such as an organic acid, and a solvent such as pu
|
