| http://www.w3.org/ns/prov#value | - To fabricate the surface-emitting LED according to the first embodiment, first epitaxially grown on the n-type GaAs substrate 1 by molecular beam epitaxy (MBE), for example, at a temperature in the range of e.g. 250??? to 300??? C., specifically at 295??? C., for example, are in sequence: the n-type ZnSe buffer layer 2, n-type ZnSSe layer 3, n-type ZnMgSSe cladding layer 4, n-type ZnSSe waveguide
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