| http://www.w3.org/ns/prov#value | - For the improvement of the data retention characteristics, the present applicant has proposed in Japanese Patent Laid-Open Publication No. Hei 2-31466 a method whereby by executing a thermal oxidation in a state in which a control gate and a floating gate are covered by a semiconductor layer such as a polycrystalline Si film or the like, a semiconductor oxide film of good film quality is formed on
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