| http://www.w3.org/ns/prov#value | - More specifically, a resist pattern RP13 is formed on the p-type MOS transistor area 30 and the bi-polar transistor area 80.In the step shown in FIG. 5(C) in the first embodiment, the resist pattern RP5 is formed on the p-type MOS transistor area 30 and the bi-polar transistor area 80 in the area except areas where the collector area 92c and the gate oxide film 52eare formed and surrounding areas
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