| http://www.w3.org/ns/prov#value | - Moreover, downstream circuits such as the data write controller, data write amplifier and column address selection circuit and memory cell array are omitted in FIG. 4because each bank #0 and #1 has the same construction as the first embodiment.The operation of the semiconductor memory according to this embodiment employing the timing signal generators 40 and 50 will now be explained.As shown in FI
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