| http://www.w3.org/ns/prov#value | - store and flash recall operation can be non-destructive i.e. the operation will not disturb the original data in the DRAM or the EEPROM. (4) The cell can be used with a low (3 to 5 volt) single voltage external power supply. (5) The EEPROM may be directly written to and the erase cycle may be avoided. (6) High voltage is restricted to the polysilicon electrodes and is not applied to diffused junct
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