| http://www.w3.org/ns/prov#value | - To attain the aforesaid objects, the present invention has the steps of (a) coating a resist film for silylation on a surface of an insulation film of a semiconductor substrate, (b) exposing a pattern on the resist film for silylation, (c) performing a silylation process with causing the resist film for silylation chemically react with a compound including silicon and forming a silylated layer, (d
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