| http://www.w3.org/ns/prov#value | - To form the collector region of the PNP transistor, P type impurities, for example boron, are introduced by ion implantation into island 18B. To form contacts to the buried regions 14A and 16B, N type impurities, for example phosphorus, are introduced into island 18A and P conductivity type impurities, for example, boron, are introduced into island 18B. Island 18C receives a N+ implant to simultan
|
