| http://www.w3.org/ns/prov#value | - For example, materials such as Ta, TaN, Nb, NbN, Al, AlN, Hf, HfN, V, VN, etc., may be similarly deposited over (and/or patterned and etched with)the first conductor 206 and then oxidized to form the layer 212, which includes the reversible resistance-switching element 202.FIG. 2B is a simplified perspective view of a portion of a first memory level 214 formed from a plurality of the memory cells
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