| http://www.w3.org/ns/prov#value | - ose the LDD structure are formed (see FIG. 8B). [0101] At this time, the region of the p-channel type TFT 402 of the driving circuit 406 and the region of the storage capacitance 405 in the pixel region 407 that are regions other than the regions where the LDD structures are formed are ion-doped with the gate electrode 323 and the electrode 326 for storage capacitance used as a mask, respectively.
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