| http://www.w3.org/ns/prov#value | - For example, U.S. Pat. No. 5,728,308 entitled ???Method of polishing a semiconductor substrate during production of a semiconductor device??? discloses a conventional slurry used for chemical mechanical polishing including particulates comprised of metal oxides such as silica (SiO2), alumina (Al2O3), titanium oxide (TiO2), and cerium oxide (CeO2) of a particle size of about 10 nm in an aqueous sol
|
