| http://www.w3.org/ns/prov#value | - In addition to the characteristic of the fabricating method of the 10th, the 11th, the 12th or the 13th invention, the 14th invention in accordance with the present invention is a method of fabricating a semiconductor thin film which is characterized by that temperature of the substrate during the laser crystallization is within a range of 200??? C. to 500??? C.
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