| http://www.w3.org/ns/prov#value | - The bond strength may be greater than 1000 mJ/m2, achieved at a low temperature, such as less than 600??? C. Referring to FIG. 4 as well as to FIG. 3, a split is induced at cleave plane 20 by annealing handle wafer 50 and epitaxial wafer 8 after they are bonded together.
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