| http://www.w3.org/ns/prov#value | - In the case of fabricating an NTFT in accordance with the fabrication process of this example, the region corresponding with the large band gap 101 shown in FIG. 10, which is obtained by adding the impurity such as carbon, nitrogen, and oxygen, can be placed closer to the channel forming region 53, compared with the case of the NTFT fabricated by the process in Embodiment 1.
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