| http://www.w3.org/ns/prov#value | - As a result, a semiconductor integrated circuit device including FET and capacitor according to the first embodiment is obtained.In the method of the first embodiment, after the gate electrode opening 12a of the insulating film 12 has been covered with the protective film 13, the SrTiO.sub.3 film 15 is deposited by plasma-enhanced RF sputtering.
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