| http://www.w3.org/ns/prov#value | - FIG. 2B shows the structure of FIG. 2A, including a dielectric layer, also called a first dielectric layer, 207 applied to silicon wafer second surface 203 using adhesive layer 204 of FIG. 2A. According to the principles of the invention, dielectric layer 207 is then ablated, using a laser or other ablation means, to form various predetermined patterns 206 in dielectric layer 207.
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