| http://www.w3.org/ns/prov#value | - However, in case where the present invention is used in the other semiconductor device, as a substrate, a single crystal or a polycrystal of silicon may be used, and other insulating material may be used. [0035] In FIG. 1, SiO2 film or silicon nitride film was formed on a glass substrate 11, as a base protective film 12.
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