| http://www.w3.org/ns/prov#value | - As shown in this table, a luminous intensity of the light-emitting semiconductor device 100 or 200 in the present invention, which has the positive electrode 120 made of metal layers comprising at least one of silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt), palladium (Pd), and an alloy including at least one of these metals, is improved by about 10% to 50% compared with the light-emittin
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