| http://www.w3.org/ns/prov#value | - Note that in FIG. 2, a TFT (n-channel TFT or p-channel TFT) provided over a substrate 210 having an insulating surface is an element for controlling a current flowing to the organic compound layer 220 b of the memory cell, and reference numerals 213 and 214 denote source or drain regions.
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