| http://www.w3.org/ns/prov#value | - Further, in the method of producing a thin film transistor according to the present invention, as a drain electrode, at least one material is used by selecting from Al, Cr, Cu, Mo and Ta or metal alloy mainly containing these metals, as the material of a pixel electrode, at least one material is used by selecting indium oxide, tin oxide and ITO (Indium Tin Oxide).
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