| http://www.w3.org/ns/prov#value | - The dry etching process is carried out at an elevated temperature of between about 200???-800??? C. An etching mask formed of an inorganic material such as silicon dioxide (SiO2), silicon nitride (Si3 N4), or a high temperature polymeric material such as a polymide defines the location of the trench openings. (In this application a conventional photoresist mask cannot be used successfully).
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