About: http://webisa.webdatacommons.org/117703521

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The present invention relates to a semiconductor device, and more particularly to a fabrication method for a semiconductor device capable of adjusting a thickness of each portion of gate insulating film at both sides of a gate.
http://www.w3.org/ns/prov#wasQuotedFrom	patents.com