| http://www.w3.org/ns/prov#value | - Then, a 6,000 ??? thick silicon oxide film 20 was deposited as an interlayer dielectric by plasma CVD. Then, contact holes were provided in the silicon oxide film 20 to form an electrode with interconnection 21 for each of the source and drain regions of the TFT by using a metallic material such as a multilayered film of titanium nitride and aluminum.
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