PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • The improved buried metal plug structure of this invention is formed next by depositing a first insulating layer, such as silicon oxide, on the FET devices and elsewhere on the substrate.
http://www.w3.org/ns/prov#wasQuotedFrom
  • google.com