| http://www.w3.org/ns/prov#value | - The ILD region 3 can have the exemplary structure shown in FIG. 2A. A layer 271 of tetraethyl orthosilicate (TEOS) is over the substrate 1 and the devices formed thereon, including the photo-conversion devices 12 and, e.g., transistors (not shown) of the pixel cells 10.
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