PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • Further, in the semiconductor device including the high-resistance element of the present invention, the interconnection layers 6 a and 6 b are formed to substantially cover a region above the high-resistance element 3.
http://www.w3.org/ns/prov#wasQuotedFrom
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