| http://www.w3.org/ns/prov#value | - In FIG. 11 on the semiconductor substrate 1101 such as Si or GaAs, transistors 1102 or other semiconductor devices or optical devices are formed, and Si3 N4 layer 1104 having, a surface for formation of, for example, nucleation surface (SNDL) 1105 is formed thereon according to the CVD method or the sputtering method.
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