PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • In a tenth aspect, the present invention is a method for manufacturing the group III nitride compound semiconductor of the fourth and fifth aspects represented by a general formula AlxGayIn1???x???yN (0???x???1, 0???y???1, 0???x+y???1).
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