| http://www.w3.org/ns/prov#value | - A second preferred embodiment of the present invention is a method for fabricating high power heterojunction bipolar transistors (HBTs) using the circuit of FIG. 3 as a basis and includes the following steps as illustrated in the cross sectional elevation views (taken through axis A--A in FIG. 3) of FIGS. 4A-4E.
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