| http://www.w3.org/ns/prov#value | - semiconductor layer containing impurities and having a silicon oxide layer on its side is formed on a part of the aforementioned protective insulating layer and on a first semiconductor layer except in a region where a pixel electrode and a signal line overlap, a signal line comprising a laminate made of an anodizable low resistant metal layer having an anodized layer on its surface and a transpa
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