About: http://webisa.webdatacommons.org/125852175

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	A silicon oxynitride film formed by adding O2 to SiH4 and N2 is a material preferable as the gate insulating film 509 because the fixed electric charge density in the film is low.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com