| http://www.w3.org/ns/prov#value | - U.S. Pat. No. 5,918,121 to Wen et al. maintains the concept of a flat spiral inductor over a silicon substrate and focuses on minimizing loss between the inductor and the substrate by forming an epitaxial area having a resistivity of thousands of ohm-cm, such as silicon lightly doped with such materials as arsenic and phosphorous.
|
