PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • FIG. 2 is a schematic cross sectional view of a partially completed more advanced DRAM storage cell having very closely spaced word lines and FET gate electrodes and depicts the problem of forming the conventional self-aligned contact.
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