| http://www.w3.org/ns/prov#value | - DETAILED DESCRIPTION OF THE INVENTION As the gate insulator, usually SiO2, thickness is being scaled down, i.e. below 5-10 nm, there is strong tendency that during any annealing, or rapid thermal annealing (RTA) steps, which are part of the device manufacturing process, the dopant originally in the polysilicon layer on the gate insulator diffuses through the gate insulator into the channel region
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