| http://www.w3.org/ns/prov#value | - A second aspect of the present invention is a method of manufacturing an integrated circuit, comprising: (a) providing a substrate; (b) forming a copper diffusion barrier layer on the substrate; (c) forming a dielectric layer on a top surface of the copper diffusion barrier layer; (d) forming a copper damascene or dual damascene wire in the dielectric layer, a top surface of the copper damascene o
|
