| http://www.w3.org/ns/prov#value | - This cycle may perpetuate itself and result in a linear region with a high density of trapped threading dislocations, i.e., dislocation pile-up. [0015] The term ???MOS??? (meaning ???metal-oxide-semiconductor???) is here used generally to refer to semiconductor devices, such as FETs, that include a conductive gate spaced at least by an insulting layer from a semiconducting channel layer.
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