| http://www.w3.org/ns/prov#value | - (4) Subsequently, a mask comprised of a-Si was formed over the areas other than the area in which to form a diamond insulator layer 5, and vapor phase synthesis was carried out by microwave plasma CVD, whereby the diamond insulator layer 5 with 0.1 ??m thickness was formed over the unmasked area (FIG. 2(d)).
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